Detail výsledku

Modeling of Microwave Semiconductor Diodes

POKORNÝ, M.; RAIDA, Z. Modeling of Microwave Semiconductor Diodes. Radioengineering, 2008, vol. 17, no. 3, p. 47-52. ISSN: 1210-2512.
Typ
článek v časopise
Jazyk
angličtina
Autoři
Pokorný Michal, Ing., Ph.D., UREL (FEKT)
Raida Zbyněk, prof. Dr. Ing., UREL (FEKT)
Abstrakt

The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.

Klíčová slova

Gunn effect, carrier injection effect, PIN, FEM, COMSOL, drift-diffusion scheme, multi-physical model.

Rok
2008
Strany
47–52
Časopis
Radioengineering, roč. 17, č. 3, ISSN 1210-2512
Vydavatel
Ústav radioelektroniky, VUT v Brně
Místo
Brno
BibTeX 
@article{BUT49090,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Modeling of Microwave Semiconductor Diodes",
  journal="Radioengineering",
  year="2008",
  volume="17",
  number="3",
  pages="47--52",
  issn="1210-2512"
}
Pracoviště
Ústav radioelektroniky (UREL)
Nahoru