Publication Details
Advanced VLSI Circuits Simulation
Kunovský Jiří, doc. Ing., CSc.
circuit simulation, VLSI circuits, Taylor series method, initial value problems
The paper deals with very accurate and effective simulation of Complementary Metal-Oxide-Semiconductor (CMOS) transistors which are used to construct basic logic gates (inverter, NAND and NOR) and their composites (XOR, AND, OR). The transistors are substituted by a resistor-capacitor (RC) circuit and the circuit is described by a system of differential algebraic equations (DAEs). These equations are numerically solved by the variable-step, variable-order Modern Taylor Series Method (MTSM). The same approach can be used for VLSI simulation - it was implemented by the corresponding author in a general purpose programming language. This approach is faster than the state of the art (SPICE) and uses less memory.
@inproceedings{BUT163432,
author="Filip {Kocina} and Jiří {Kunovský}",
title="Advanced VLSI Circuits Simulation",
booktitle="Proceedings of the 2017 International Conference on High Performance Computing & Simulation (HPCS 2017)",
year="2017",
pages="526--533",
publisher="Institute of Electrical and Electronics Engineers",
address="Genoa",
doi="10.1109/HPCS.2017.84",
isbn="978-1-5386-3250-5",
url="https://ieeexplore.ieee.org/document/8035123"
}