Publication Details
CMOS Gates with Second Function
Růžička Richard, doc. Ing., Ph.D., MBA (DCSY)
Šimek Václav, Ing. (DCSY)
Polymorphic electronics, MOSFET, polymorphic
gate, digital circuit, gate set
In this paper, a new approach to design of multifunctional digital circuits is
presented. It is based on adoption of polymorphic electronics paradigm which
permits digital circuits to exhibit more than one function while preserving the
same structure. In that case only components of the circuit (gates) have to be
multifunctional. Individual gates have typically built-in sensitivity to the
occurrence of some phenomena invoking the function change (e.g. power supply
level etc.), which means that no dedicated net is required for that purpose. One
of the key advantages of such circuits is the efficiency in terms of size. In
this paper, MOS transistors are exploited in an unconventional manner where the
circuit function selection depends just on the condition of power supply voltage
rails, which is otherwise typical for polymorphic circuits utilizing ambipolar
transistors. Furthermore, a first complete set of successfully simulated
two-input polymorphic gates was obtained. These gates show the best parameters of
all the previously published polymorphic gates - high input impedance and low
output impedance, short time of signal propagation, low power consumption and low
transistor count being used. Wide range of proposed polymorphic gates (function
combinations) may help to obtain more efficient results during synthesis.
@inproceedings{BUT155008,
author="Jan {Nevoral} and Richard {Růžička} and Václav {Šimek}",
title="CMOS Gates with Second Function",
booktitle="2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)",
year="2018",
pages="82--87",
publisher="IEEE Computer Society",
address="Hong Kong",
doi="10.1109/ISVLSI.2018.00025",
isbn="978-1-5386-7099-6"
}